Publications

Sharma, Peter A.; Lima-Sharma, Ana L.; Siegal, Michael P.; Lu, Tzu-Ming L.; Lidsky, David A.

Abstract not provided.

Lu, Tzu-Ming L.; Lewis, Rupert; Sharma, Peter A.; Harris, Charles T.; Lima-Sharma, Ana L.; Bretz-Sullivan, Terence M.; Lidsky, David A.; Venuti, Michael V.; Eley, Serena E.

Abstract not provided.

Journal of Applied Physics

Siegal, Michael P.; Podkaminer, J.; Lima-Sharma, Ana L.; Sharma, Peter A.; Medlin, Douglas L.

The room temperature electronic transport properties of 1 μm thick Bi0.4Sb1.6Te3 (BST) films correlate with overall microstructural quality. Films with homogeneous composition are deposited onto fused silica substrates, capped with SiN to prevent both oxidation and Te loss, and postannealed to temperatures ranging from 200 to 450 °C. BST grain sizes and (00l) orientations improve dramatically with annealing to 375 °C, with smaller increases to 450 °C. Tiny few-nanometer-sized voids in the as-deposited film grain boundaries coalesce into larger void sizes up to 300 nm with annealing to 350 °C; the smallest voids continue coalescing with annealing to 450 °C. These voids are decorated with few-nanometer-sized Sb clusters that increase in number with increasing annealing temperatures, reducing the Sb content of the remaining BST film matrix. Resistivity decreases linearly with increasing temperature over the entire range studied, consistent with improving crystalline quality. The Seebeck coefficient also improves with crystalline quality to 350 °C, above which void coalescence and reduced Sb content from the BST matrix correlate with a decrease in the Seebeck coefficient. Nevertheless, a plateau exists for an optimal power factor between 350 and 450 °C, implying thermal stability to higher temperatures than previously reported.

Chemistry of Materials

Lee, Stephen R.; Sharma, Peter A.; Lima-Sharma, Ana L.; Pan, Wei P.; Nenoff, T.M.

In the past decade, basic physics, chemistry, and materials science research on topological quantum materials - and their potential use to implement reliable quantum computers - has rapidly expanded to become a major endeavor. A pivotal goal of this research has been to realize materials hosting Majorana quasiparticles, thereby making topological quantum computing a technological reality. While this goal remains elusive, recent data-mining studies, performed using topological quantum chemistry methodologies, have identified thousands of potential topological materials - some, and perhaps many, with potential for hosting Majoranas. We write this Review for advanced materials researchers who are interested in joining this expanding search, but who are not currently specialists in topology. The first half of the Review addresses, in readily understood terms, three main areas associated with topological sciences: (1) a description of topological quantum materials and how they enable quantum computing; (2) an explanation of Majorana quasiparticles, the important topologically endowed properties, and how it arises quantum mechanically; and (3) a description of the basic classes of topological materials where Majoranas might be found. The second half of the Review details selected materials systems where intense research efforts are underway to demonstrate nontrivial topological phenomena in the search for Majoranas. Specific materials reviewed include the groups II-V semiconductors (Cd3As2), the layered chalcogenides (MX2, ZrTe5), and the rare-earth pyrochlore iridates (A2Ir2O7, A = Eu, Pr). In each case, we describe crystallographic structures, bulk phase diagrams, materials synthesis methods (bulk, thin film, and/or nanowire forms), methods used to characterize topological phenomena, and potential evidence for the existence of Majorana quasiparticles.

Sharma, Peter A.; Douglas, Erica A.; Henry, Michael D.; Lewis, Rupert; Harris, Charles T.; Wiwi, Michael W.; Smith, Sean S.; Lima-Sharma, Ana L.; Brumbach, Michael T.; Sugar, Joshua D.

Abstract not provided.

Siegal, Michael P.; Sharma, Peter A.; Lima-Sharma, Ana L.; Medlin, Douglas L.; Friedman, Caitlin R.

Abstract not provided.

Podkaminer, Jacob P.; Siegal, Michael P.; Medlin, Douglas L.; Sharma, Peter A.; Lima-Sharma, Ana L.

Abstract not provided.

Applied Physics Letters

Siegal, Michael P.; Lima-Sharma, Ana L.; Sharma, Peter A.; Friedman, Caitlin R.

The room temperature electronic transport properties of 100 nm-thick thermoelectric Bi_0.8Sb_0.2 films, sputter-deposited onto quartz substrates and post-annealed in an ex-situ furnace, systematically correlate with the overall microstructural quality, improving with increasing annealing temperature until close to the melting point for the alloy composition. Furthermore, the optimized films have high crystalline quality with ~99% of the grains oriented with the trigonal axis perpendicular to the substrate surface. Film resistivities and Seebeck coefficients are accurately measured by preventing deleterious surface oxide formation via a SiN capping layer and using Nd-doped Al for contacts. Our resulting values are similar to single crystals and significantly better than previous reports from films and polycrystalline bulk alloys.

Sharma, Peter A.; Henry, Michael D.; Douglas, Erica A.; Wiwi, Michael W.; Lima-Sharma, Ana L.; Lewis, Rupert; Sugar, Joshua D.

Abstract not provided.