Publications

Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts

Black, Jeffrey B.; Dame, Jeff A.; Black, Dolores A.; Dodd, Paul E.; Shaneyfelt, Marty R.; Teifel, John T.; Salas, Joseph G.; Steinbach, Robert; Davis, Matthew; Reed, Robert A.; Weller, Robert A.; Trippe, James M.; Warren, Kevin M.; Tonigan, Andrew M.; Schrimpf, Ronald D.; Marquez, Richard S.

Silicon-on-insulator latch designs and layouts that are robust to multiple-node charge collection are introduced. A general Monte Carlo radiative energy deposition (MRED) approach is used to identify potential single-event susceptibilities associated with different layouts prior to fabrication. MRED is also applied to bound single-event testing responses of standard and dual interlocked cell latch designs. Heavy ion single-event testing results validate new latch designs and demonstrate bounds for standard latch layouts.