Publications

Tunable Nitride Josephson Junctions

Missert, Nancy A.; Henry, Michael D.; Lewis, Rupert; Howell, Stephen W.; Wolfley, Steven L.; Brunke, Lyle B.; Wolak, Matthaeus W.

We have developed an ambient temperature, SiO₂/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta_xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO_x barriers for low - power, high - performance computing.