Publications

Total ionizing dose effects in NOR and NAND flash memories

Cellere, Giorgio; Paccagnella, Alessandro; Visconti, Angelo; Bonanomi, Mauro; Beltrami, S.; Schwank, James R.; Shaneyfelt, Marty R.; Paillet, Philippe

We irradiated floating gate (FG) memories with NOR and NAND architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and γ-rays. Two classes of phenomena are responsible for charge loss from programmed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from γ-rays, whereas the use of X-rays results in dose enhancement effects. © 2007 IEEE.