Publications

Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries

Stewart, David M.; Pearse, Alexander J.; Kim, Nam S.; Fuller, Elliot J.; Talin, A.A.; Gregorczyk, Keith; Lee, Sang B.; Rubloff, Gary W.

Major advances in thin-film solid-state batteries (TFSSBs) may capitalize on 3D structuring using high-aspect-ratio substrates such as nanoscale pits, pores, trenches, flexible polymers, and textiles. This will require conformal processes such as atomic layer deposition (ALD) for every active functional component of the battery. Here we explore the deposition and electrochemical properties of SnO2, SnNy, and SnOxNy thin films as TFSSB anode materials, grown by ALD using tetrakisdimethylamido(tin), H2O, and N2 plasma as precursors. By controlling the dose ratio between H2O and N2, the N-O fraction can be tuned between 0% N and 95% N. The electrochemical properties of these materials were tested across a composition range varying from pure SnO2, to SnON intermediates, and pure SnNy. In TFSSBs, the SnNy anodes are found to be more stable during cycling than the SnO2 or SnOxNy films, with an initial reversible capacity beyond that of Li-Sn alloying, retaining 75% of their capacity over 200 cycles compared to only 50% for SnO2. Furthermore, the performance of the SnOxNy anodes indicates that SnNy anodes should not be negatively impacted by small levels of O contamination.