Publications

Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure

Liu, Xiaoxue; Lu, Tzu-Ming L.; Harris, Charles T.; Lu, Fang L.; Liu, Chia Y.; Li, Jiun Y.; Liu, Chee W.; Du, Rui R.

We investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).