Publications

Thermal Conductivity of β-Phase Ga₂O₃ and (Al_xGa_1–x)₂O₃ Heteroepitaxial Thin Films

Klein, Brianna A.; Song, Yiwen S.; Ranga, Praneeth R.; Zhang, Yingying Z.; Feng, Zixuan F.; Huang, Hsien-Lien H.; Santia, Marco S.; Badescu, Stefan C.; Gonzalez-Valle, C.U.; Perez, Carlos P.; Ferri, Kevin F.; Lavelle, Robert M.; Snyder, David W.; Deitz, Julia D.; Baca, Albert G.; Maria, Jon-Paul M.; Ramos-Alvarado, Bladimir R.; Hwang, Jinwoo H.; Zhao, Hongping Z.; Wang, Xiaojia W.; Krishnamoorthy, Sriram K.; Foley, Brian M.; Choi, Sukwon C.

Heteroepitaxy of β-phase gallium oxide (β-Ga₂O₃) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ($\bar{2}01$)-oriented β-Ga₂O₃ heteroepitaxial thin films were investigated. Unintentionally doped β-Ga₂O₃ thin films were grown on c-plane sapphire substrates with off-axis angles of 0° and 6° toward $\langle$$11\bar{2}0$$\rangle$ via metal–organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the β-Ga₂O₃ thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the β-Ga₂O₃ films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick β-Ga₂O₃ thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye–Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of β-Ga₂O₃ films on 6° offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the β-Ga₂O₃ films grown on 6° offcut sapphire exhibit a lower thermal boundary conductance at the β-Ga₂O₃/sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ($\bar{2}01$)-oriented β-(Al_xGa_1–x)₂O₃ thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the β-(Al_xGa_1–x)₂O₃ films exhibit lower thermal conductivities (2.8–4.7 W/m∙K) than the β-Ga₂O₃ thin films. The dominance of the alloy disorder scattering in β-(Al_xGa_1–x)₂O₃ is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown β-phase Ga₂O₃ and (Al_xGa_1–x)₂O₃ thin films and lays the groundwork for the thermal modeling and design of β-Ga₂O₃ electronic and optoelectronic devices.