Publications

Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes

Yu, Wenlong; Jiang, Yuxuan; Huan, Chao; Chen, Xunchi; Jiang, Zhigang; Hawkins, Samuel D.; Klem, John F.; Pan, Wei P.

We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface, a broad conductance peak is observed at zero bias. When a transparent InAs-Ta interface is achieved, a zero-bias conductance dip appears with two coherent-peak-like features forming at bias voltages corresponding to the superconducting gap of Ta. The conductance spectra of the transparent InAs-Ta junction at different gate voltages can be fit well using the standard Blonder-Tinkham-Klapwijk theory.