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SNS Josephson Junctions with Tunable Ta-N Barriers

Wolak, Matthaeus W.; Missert, Nancy A.; Henry, Michael D.; Lewis, Rupert; Wolfley, Steven L.; Brunke, Lyle B.; Sierra Suarez, Jonatan A.

We report on the fabrication and characterization of Nb/Ta-N/Nb Josephson junctions grown by room temperature magnetron sputtering on 150-mm diameter Si wafers. Junction characteristics depend upon the Ta-N barrier composition, which was varied by adjusting the N2 flow during film deposition. Higher N2 flow rates raise the barrier resistance and increase the junction critical current. This work demonstrates the viability of Ta-N as an alternative barrier to aluminum oxide, with the potential for large scale integration.