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Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley A.; Marinella, M.J.; Kaplar, Robert K.

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.