Publications

Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

Choquette, K.D.; Geib, K.M.; Klem, John F.; Fischer, Arthur J.; Spahn, Olga B.; Allerman, A.A.; Fritz, I.J.; Kurtz, S.R.; Breiland, William G.

Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.