Publications

RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with 80-nm Gates

Baca, A.G.; Klein, Brianna A.; Wendt, J.R.; Lepkowski, Stefan M.; Nordquist, Christopher N.; Armstrong, Andrew A.; Allerman, A.A.; Douglas, Erica A.; Kaplar, Robert K.

Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. The dc characteristics include a maximum current of 160 mA/mm with a transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GHz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.