Publications

RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors

Baca, A.G.; Chang, P.C.; Li, N.Y.; Hou, H.Q.; Monier, C.; Laroche, J.; Ren, F.; Pearton, S.J.

We have demonstrated a P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (VON) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal DC characteristics with a current gain (β) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with fT and fMAX values are both approximately 12 GHz. This device may be suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.