Publications

Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot

Nguyen, Khoi T.; Carroll, Malcolm; Lilly, Michael L.; Bishop, Nathaniel B.; Nielsen, Erik N.; Wendt, J.R.; Dominguez, Jason J.; Pluym, Tammy P.; Stevens, Jeffrey S.; Ten Eyck, Gregory A.

Abstract not provided.