Publications

Potentials and fields in a 300-mm dual-frequency reactor

Miller, Paul A.; Barnat, Edward V.; Hebner, Gregory A.

Dual-frequency reactors employ source rf power supplies to generate plasma and bias supplies to extract ions. There is debate over choices for the source and bias frequencies. Higher frequencies facilitate plasma generation but their shorter wavelengths may cause spatial variations in plasma properties. Electrical nonlinearity of plasma sheaths causes harmonic generation and mixing of source and bias frequencies. These processes, and the resulting spectrum of frequencies, are as much dependent on electrical characteristics of matching networks and on chamber geometry as on plasma sheath properties. We investigated such electrical effects in a 300-mm Applied-Materials plasma reactor. Data were taken for 13.56-MHz bias frequency (chuck) and for source frequencies from 30 to 160 MHz (upper electrode). An rf-magnetic-field probe (B-dot loop) was used to measure the radial variation of fields inside the plasma. We will describe the results of this work.