Publications

OMVPE of GaAsSbN for long wavelength emission on GaAs

Peake, Gregory M.; Peake, Gregory M.; Waldrip, Karen E.; Hargett, Terry H.; Modine, N.A.; Serkland, Darwin K.

GaAsSbN was grown by organometallic vapor phase epitaxy (OMVPE) as an alternative material to InGaAsN for long wavelength emission on GaAs substrates. OMVPE of GaAsSbN using trimethylgallium, 100% arsine, trimethylantimony, and 1,1-dimethylhydrazine was found to be kinetically limited at growth temperatures ranging from 520 C to 600 C, with an activation energy of 10.4 kcal/mol. The growth rate was linearly dependent on the group III flow and has a complex dependence on the group V constituents. A room temperature photoluminescence wavelength of >1.3 {micro}m was observed for unannealed GaAs{sub 0.69}Sb{sub 0.3}N{sub 0.01}. Low temperature (4 K) photoluminescence of GaAs{sub 0.69}Sb{sub 0.3}N{sub 0.01} shows an increase in FWHM of 2.4-3.4 times the FWHM of GaAs{sub 0.7}Sb{sub 0.3}, a red shift of 55-77 meV, and a decrease in intensity of one to two orders of magnitude. Hall measurements indicate a behavior similar to that of InGaAsN, a 300 K hole mobility of 350 cm{sup 2}/V-s with a 1.0 x 10{sup 17}/cm{sup 3} background hole concentration, and a 77 K mobility of 1220 cm{sup 2}/V-s with a background hole concentration of 4.8 x 10{sup 16}/cm{sup 3}. The hole mass of GaAs{sub 0.7}Sb{sub 0.3}/GaAs heterostructures was estimated at 0.37-0.40m{sub o}, and we estimate an electron mass of 0.2-0.3m{sub o} for the GaAs{sub 0.69}Sb{sub 0.3}N{sub 0.01}/GaAs system. The reduced exciton mass for GaAsSbN was estimated at about twice that found for GaAsSb by a comparison of diamagnetic shift vs. magnetic field.