Publications

Oblique patterned etching of vertical silicon sidewalls

Burckel, David B.; Finnegan, Patrick S.; Henry, Michael D.; Resnick, Paul J.; Jarecki, Robert L.

A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.