Publications

Nonvolatile voltage controlled molecular spin‐state switching for memory applications

Ekanayaka, Thilini K.; Hao, Guanhua; Mosey, Aaron; Dale, Ashley S.; Jiang, Xuanyuan; Yost, Andrew J.; Sapkota, Keshab R.; Wang, George T.; Zhang, Jian; N’Diaye, Alpha T.; Marshall, Andrew; Cheng, Ruihua; Naeemi, Azad; Xu, Xiaoshan; Dowben, Peter A.

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid‐state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol‐1‐yl)‐borohydride and bipy = 2,2′‐bipyridine, voltage‐controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low‐cost molecular solid‐state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.