Publications
Nano-scale optical and electrical probes of materials and processes
This report describes the investigations and milestones of the Nano-Scale Optical and Electrical Probes of Materials and Processes Junior/Senior LDRD. The goal of this LDRD was to improve our understanding of radiative and non-radiative mechanisms at the nanometer scale with the aim of increasing LED and solar cell efficiencies. These non-radiative mechanisms were investigated using a unique combination of optical and scanning-probe microscopy methods for surface, materials, and device evaluation. For this research we utilized our new near-field scanning optical microscope (NSOM) system to aid in understanding of defect-related emission issues for GaN-based materials. We observed micrometer-scale variations in photoluminescence (PL) intensity for GaN films grown on Cantilever Epitaxy pattern substrates, with lower PL intensity observed in regions with higher dislocation densities. By adding electrical probes to the NSOM system, the photocurrent and surface morphology could be measured concurrently. Using this capability we observed reduced emission in InGaN MQW LEDs near hillock-shaped material defects. In spatially- and spectrally-resolved PL studies, the emission intensity and measured wavelength varied across the wafer, suggesting the possibility of indium segregation within the InGaN quantum wells. Blue-shifting of the InGaN MQW wavelength due to thinning of quantum wells was also observed on top of large-scale ({micro}m) defect structures in GaN. As a direct result of this program, we have expanded the awareness of our new NSOM/multifunctional SPM capability at Sandia and formed several collaborations within Sandia and with NINE Universities. Possible future investigations with these new collaborators might include GaN-based compound semiconductors for green LEDs, nanoscale materials science, and nanostructures, novel application of polymers for OLEDs, and phase imprint lithography for large area 3D nanostructures.