Publications

Morphology evolution on diamond surfaces during ion sputtering

Mayer, T.M.; Adams, David P.; Archuleta, Kim A.

We have conducted an extensive study of the evolution of surface morphology of single crystal diamond surfaces during sputtering by 20 keV Ga{sup +} and Ga{sup +} + H{sub 2}O. We observe the formation of well-ordered ripples on the surface for angles of incidence between 40 and 70{sup o}. We have also measured sputter yields as a function of angle of incidence, and ripple wavelength and amplitude dependence on angle of incidence and ion fluence. Smooth surface morphology is observed for <40{sup o}, and a transition to a step-and-terrace structure is observed for >70{sup o}. The formation and evolution of well-ordered surface ripples is well characterized by the model of Bradley and Harper, where sputter-induced roughening is balanced by surface transport smoothing. Smoothing is consistent with an ion-induced viscous relaxation mechanism. Ripple amplitude saturates at high ion fluence, confirming the effect of nonlinear processes. Differences between Ga{sup +} and Ga{sup +} + H{sub 2}O in ripple wavelength, amplitude, and time to saturation of amplitude are consistent with the increased sputter yield observed for Ga{sup +} + H{sub 2}O. For angle of incidence <40{sup o}, an ion bombardment-induced 'atomic drift' mechanism for surface smoothing may be responsible for suppression of ripple formation. For Ga{sup +} + H{sub 2}O, we observe anomalous formation of very large amplitude and wavelength, poorly ordered surface ridges for angle of incidence near 40{sup o}. Finally, we observe that ripple initiation on smooth surfaces can take place by initial stochastic roughening followed by evolution of increasingly well-ordered ripples.