Publications

Modeling low dose rate effects in shallow trench isolation oxides

Esqueda, Ivan S.; Barnaby, Hugh J.; Adell, Philippe C.; Rax, Bernard G.; Hjalmarson, Harold P.; McLain, Michael L.; Pease, Ronald L.

Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations. © 2011 IEEE.