Publications

Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen

Kurtz, S.R.; Allerman, A.A.; Seager, Carleton H.; Jones, E.D.

Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.