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Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

Noh, Hwayong; Lilly, M.P.; Tsui, D.C.; Simmons, J.A.; Pfeiffer, L.N.; West, K.W.

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e2/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport. © 2003 The American Physical Society.