Publications
LDRD Report : Analysis of Defect Clustering in Semiconductors using Kinetic Monte Carlo Methods
The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. Neutron irradiation can instigate the formation of quasi-stable defect structures, thereby introducing new energy levels into the bandgap that alter carrier lifetimes and give rise to such phenomena as gain degradation in bipolar junction transistors. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. A kinetic Monte Carlo (KMC) code has been developed to model both thermal and carrier injection annealing of initial defect structures in semiconductor materials. Following the development of a set of verification tests, the code is employed to investigate annealing in electron-irradiated, p-type silicon as well as the recovery of base current in silicon transistors bombarded with neutrons at the Los Alamos LANSCE "Blue Room" facility. The results reveal that KMC calculations agree well with experiment once adjustments are made to significant defect parameters within the appropriate uncertainty bounds.