Publications

Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control

Siddiqui, Aleem M.; Hackett, Lisa A.; Dominguez, Daniel D.; Tauke-Pedretti, Anna; Friedmann, Thomas A.; Peake, Gregory M.; Miller, Michael R.; Douglas, James K.; Eichenfield, Matthew S.

This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.