Publications

Impact of the modulation doping layer on the ν=5/2 anisotropy

Shi, X.; Pan, Wei P.; Baldwin, K.W.; West, K.W.; Pfeiffer, L.N.; Tsui, D.C.

We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1-10] crystallographic direction, but remains more or less isotropic when Bip[110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν=5/2 anisotropy.