Publications

High voltage and high current density vertical GaN power diodes

Armstrong, Andrew A.; Allerman, A.A.; Fischer, Arthur J.; King, M.P.; Van Heukelom, Michael V.; Moseley, M.W.; Kaplar, Robert K.; Wierer, J.J.; Crawford, Mary H.; Dickerson, Jeramy R.

The realisation of a GaN high voltage vertical p-n diode operating at >3.9 kV breakdown with a specific on-resistance <0.9 mΩ cm2 is reported. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density >1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.