Publications
High strength diffusion bonding of beryllium to CuCrZr for ITER applications
Samples of nuclear grade beryllium, S65C, were diffusion bonded to a copper, chrome, zirconium alloy, C18150, using hot isostatic pressing. Metallization films of titanium, copper and gold were used to promote bonding, and inhibit the formation of undesirable beryllium copper intermetallics as well as prevent oxide formation before the bonding process commenced. The samples were bonded at 580C and 100 MPa for two hours. All of the samples formed bonds that had shear strength values that approached that of the S65C base metal. HIP bonding resulted in the formation of stoichiometric intermetallic layers between the copper and titanium films including TiCu and Ti2Cu. A much thinner intermetallic layer was also observed between the titanium film and the beryllium substrate, possibly Be2Ti. Shear specimens were used to measure the strength of the interfaces with peak strengths between 127 and 191 MPa were measured. Failure was found to occur predominately along one of the TiCu intermetallic layers. Copyright © 2009 ASM International® All rights reserved.