Publications

High-Speed and Low-Energy Nitride Memristors

Choi, Byung J.; Torrezan, Antonio C.; Strachan, John P.; Kotula, Paul G.; Lohn, A.J.; Marinella, Matthew J.; Li, Zhiyong; Williams, R.S.; Yang, J.J.

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.