Publications

Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

Schwank, James R.; Fleetwood, D.M.; Xiong, H.D.; Shaneyfelt, Marty R.; Draper, Bruce L.

Implanting the buried oxide of silicon-on-insulator technologies can create electron traps throughout the buried oxide that can compensate the buildup of radiation-induced positive charge. These can be used as an effective method for total-dose hardening buried oxides in SOI devices. In this work, we show that implanting buried oxides can also create thermally activated metastable electron traps near the top Si/SiO2 border. These metastable electron traps can produce significant bias instabilities in the back-gate transistor characteristics and lead to threshold voltage instabilities in fully-depleted devices. © 2004 Elsevier B.V. All rights reserved.