Publications

GaN pnp bipolar junction transistors operated to 250 °C

Zhang, A.P.; Dang, G.; Ren, F.; Han, J.; Monier, C.; Baca, A.G.; Cao, X.A.; Cho, H.; Abernathy, C.R.; Pearton, S.J.

We report on the dc performance of GaN pnp bipolar junction transistors. The structure was grown by metal organic chemical vapor deposition on c-plane sapphire substrates and mesas formed by low damage inductively coupled plasma etching with a Cl2/Ar chemistry. The dc characteristics were measured up to VBC of 65 V in the common base mode and at temperatures up to 250 °C. Under all conditions, IC-IE, indicating higher emitter injection efficiency. The offset voltage was ≤ 2 V and the devices were operated up to power densities of 40 kW cm-2. © 2002 Elsevier Science Ltd. All rights reserved.