Publications

GaN electronics for high power, high temperature applications

Pearton, S.J.; Ren, F.; Zhang, A.P.; Dang, G.; Cao, X.A.; Lee, K.P.; Cho, H.; Gila, B.P.; Johnson, J.W.; Monier, C.; Abernathy, C.R.; Han, J.; Baca, A.G.; Chyi, J.I.; Lee, C.M.; Nee, T.E.; Chuo, C.C.; Chu, S.N.G.

The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.