Publications
Focused ion beam milling of diamond : effects of H2O on yield, surface morphology and microstructure
The effects of H{sub 2}O vapor introduced during focused ion beam (FIB) milling of diamond(100) are examined. In particular, we determine the yield, surface morphology, and microstructural damage that results from FIB sputtering and H{sub 2}O-assisted FIB milling processes. Experiments involving 20 keV Ga{sup +} bombardment to doses {approx}10{sup 18} ions/cm{sup 2} are conducted at a number of fixed ion incidence angles, {theta}. For each {theta} selected, H{sub 2}O-assisted ion milling shows an increased material removal rate compared with FIB sputtering (no gas assist). The amount by which the yield is enhanced depends on the angle of incidence with the largest difference occurring at {theta} = 75{sup o}. Experiments that vary pixel dwell time from 3 {micro}s to 20 ms while maintaining a fixed H{sub 2}O gas pressure demonstrate the additional effect of beam scan rate on yield for gas-assisted processes. Different surface morphologies develop during ion bombardment depending on the angle of ion incidence and the presence/absence of H{sub 2}O. In general, a single mode of ripples having a wave vector aligned with the projection of the ion beam vector forms for {theta} as high as 70{sup o}. H{sub 2}O affects this morphology by lowering the ripple onset angle and decreasing the ripple wavelength. At high angles of incidence ({theta} > 70{sup o}) a step/terrace morphology is observed. H{sub 2}O-assisted milling at {theta} > 70{sup o} results in a smoother stepped surface compared with FIB sputtering. Transmission electron microscopy shows that the amorphized thickness is reduced by 20% when using H{sub 2}O-assisted FIB milling.