Publications

Field dependent dopant deactivation in bipolar devices at elevated irradiation temperatures

Witczak, Steven C.; Schwank, James R.; Shaneyfelt, Marty R.; Winokur, Peter S.

Dopant deactivation at 100 C is measured in bipolar Si-SiO{sub 2} structures as a function of irradiation bias. The deactivation occurs most efficiently at small biases in depletion and is consistent with passivation and compensation mechanisms involving hydrogen.