Publications

Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

Taggart, Jennifer L.; Jacobs-Gedrim, Robin B.; McLain, M.L.; Barnaby, H.J.; Bielejec, E.S.; Hardy, W.; Marinella, M.J.; Kozicki, M.N.; Holbert, K.

With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage (DD) effects may also be an issue. In this paper, the response of CBRAM to 100-keV Li, 1-MeV Ta, and 200-keV Si ion irradiations is examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programed state. The TID and DD dose (DDD) at the fluence of failure were calculated and compared against tested ion species. Results indicate that failures are more highly correlated with TID than DDD. DC cycling tests were performed during 100-keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14-MeV neutron work, suggest that DD may play a role in the eventual failure of a CBRAM device in a combined radiation environment.