Publications

Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies

Privat, A.; Barnaby, H.J.; Spear, M.; Esposito, Madeline G.; Manuel, Jack E.; Clark, L.; Brunhaver, John S.; Duvnjak, A.; Jokai, R.; Holbert, K.E.; McLain, M.L.; Marinella, M.J.; King, M.P.

Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in the isolation layer give rise to a new radiation-induced leakage path which might lead to a reliability issue in CMOS technologies at or below the 14-nm node. TCAD simulations are performed and an analytical model for TID-induced leakage current is presented to support analysis of the identified TID mechanism. TCAD simulation and analytical model results are consistent with the experimental data.