Publications

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes

Binder, Andrew B.; Pickrell, Gregory P.; Allerman, A.A.; Dickerson, Jeramy R.; Yates, Luke Y.; Steinfeldt, Jeffrey A.; Glaser, Caleb E.; Crawford, Mary H.; Armstrong, Andrew A.; Sharps, Paul; Kaplar, Robert K.

This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V was achieved at 1 mA reverse leakage, with a sub 1 V turn-on and a specific on-resistance of 10 mΩ-cm2. This result is compared to other reported JBS devices in the literature and our device demonstrates the lowest leakage slope at high reverse bias. A large initial leakage current is present near zero-bias which is attributed to a combination of inadequate etch-damage removal and passivation induced leakage current.