Publications

Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability

Hughart, David R.; Kao, Wei-Chieh K.; Goryll, Michael G.; Jiao, ChunKun J.; Dhar, Sarit D.; Cooper, James A.; Schroder, Dieter S.; Atcitty, Stanley A.; Flicker, Jack D.; Marinella, Matthew J.; Kaplar, Robert K.

Abstract not provided.