Publications

Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2Interface Defects

Moxim, Stephen J.; Lenahan, Patrick M.; Sharov, Fedor V.; Haase, Gad S.; Hughart, David R.

We report electrically detected magnetic resonance (EDMR) results in metal-oxidesemiconductor field effect transistors before and after high field gate stressing. The measurements utilize EDMR detected through interface recombination currents. These interface recombination measurements provide information about one aspect of the stressing damage: The chemical and physical identity of trapping centers generated at and very near the interface. EDMR signal demonstrates that interface defects known as centers play important roles in the stress-induced damage.