Publications

Electrical breakdown in thin oxides during bias-temperature ramps

Riewe, Leonard C.; Winokur, Peter S.; Sexton, Frederick W.; Sexton, Frederick W.

Electrical breakdown in thin oxides is assessed by a new bias-temperature ramp technique. No significant effect of radiation exposure on breakdown is observed for high quality thermal and nitrided oxides, up to 20 Mrad(SiO{sub 2}).