Publications
Effects of pressure on deep levels in semiconductors: The MFe center in InP
This work investigated the effects of hydrostatic pressure on the properties and bistability of the scientifically challenging and technologically important deep MFe center in iron (Fe)-doped, n-type indium phosphide (InP). When occupied by electrons, the center can be reversibly placed in either of two configurations, termed A and B, by the proper choice of electric biasing conditions and temperature. Pressure has a very large influence on the balance between these two configurations, favoring A over B. Above 8 kbar essentially only the A configuration is observed. This result, along with detailed studies of the effects of pressure on the energetics of the two configurations and on the kinetics of the B → A transformation, provide important new insights about the nature of the two configurations and their associated deep levels. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.