Publications

Device characteristics of the GaAs/InGaAsN/GaAs P-N-P double heterojunction bipolar transistor

Chang, P.C.; Li, N.Y.; Baca, A.G.; Hou, H.Q.; Monier, C.; Laroche, J.R.; Ren, F.; Pearton, S.J.

We have demonstrated the dc and rf characteristics of a novel p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor. This device has near ideal current-voltage (I-V) characteristics with a current gain greater than 45. The smaller bandgap energy of the InGaAsN base has led to a device turn-on voltage that is 0.27 V lower than in a comparable p-n-p AlGaAs/GaAs heterojunction bipolar transistor. This device has shown f T and f MAX values of 12 GHz. In addition, the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.