Publications
Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact
Baca, A.G.; Armstrong, Andrew A.; Allerman, A.A.; Douglas, Erica A.; Sanchez, Carlos A.; King, Michael P.; Coltrin, Michael E.; Fortune, Torben R.; Kaplar, Robert K.
Abstract not provided.