Publications

Damage equivalence of heavy ions in silicon bipolar junction transistors

Bielejec, E.; Vizkelethy, G.; Kolb, N.R.; King, Donald B.; Doyle, Barney L.

Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. © 2006 IEEE.