Publications

Creating wide band gap LEDs without P-doping

Agarwal, Sapan A.; Dickerson, Jeramy R.; Tsao, Jeffrey Y.

Wide band gap semiconductors like AlN typically cannot be efficiently p-doped: acceptor levels are far from the valence band-edge, preventing holes from activating. This means that pn-junctions cannot be created, and the semiconductor is less useful, a particular problem for deep Ultraviolet (UV) optoelectronics.