Publications

Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

Fischer, Arthur J.; Klem, John F.; Choquette, K.D.; Blum, O.; Allerman, A.A.; Fritz, I.J.; Kurtz, S.R.; Breiland, William G.; Sieg, R.; Geib, K.M.; Scott, J.W.; Naone, R.L.

The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.