Publications

Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Baca, A.G.; Briggs, R.D.; Schoenfeld, D.; Pearton, S.J.

A comparison of the performance of WSi x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi x/SiC rectifiers show little deterioration of the contact with the same conditions.