Publications

Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

Nguyen, Khoi T.; Lu, Tzu-Ming L.; Muller, Richard P.; Carroll, Malcolm; Lilly, Michael L.; Nielsen, Erik N.; Bishop, Nathaniel B.; Young, Ralph W.; Wendt, J.R.; Dominguez, Jason J.; Pluym, Tammy P.; Stevens, Jeffrey S.

We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.