Publications

Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers

Bender, Daniel A.; Wanke, Michael W.; Montano, Ines M.; Cross, Karen C.

Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare different growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.