Publications

Carrier tunneling in models of irradiated heterojunction bipolar transistors

Wampler, William R.; Myers, S.M.

As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.